| Series | TS4-M | TS4-C | TS4-H | TS4-B |
| Power suuply | AC Power | 100-240VAC~50/60Hz or 24-48 VDC |
| AC/DC Power | 24VAC~50/60Hz, 24-48VDC |
| Allowable voltage range | 90 to 110% of rated voltage |
| Power consumption | AC Power | Max. 5VA(100-240VAC 50/60Hz) |
| AC/DC Power | Max. 5V(24VAC 50/60Hz), Max. 3W(24-48VDC) |
| Display method | 7 segment (PV: red, SV: green), other display part(green, red) LED method |
| Character size | PV(W×H) | 7.0×15.0mm | 9.5×20.0mm | 7.0×14.6mm | 11.0×22.0mm |
| SV(W×H) | 5.0×9.5mm | 7.5×15.0mm | 6.0×12.0mm | 7.0×14.0mm |
| Input type | RTD | DIN Pt100Ω, Cu50Ω (Allowable line resistance max.5Ω per a wire) |
| TC | K(CA), J(IC), L(IC), T(CC), R(PR), S(PR) |
| Display accuracy | RTD | At room temperature(23℃ ± 5℃): (PV ± 0.5% or ±1℃, select the higher one) ± 1 digit Out of room temeperature range: (PV ± 0.5% or ±2℃, select the higher one)± 1 digit For TM4S-□-P, add ±1℃ by accuracy standard. |
| TC |
| Control output | Relay | 250VAC~3A 1a |
| SSR | 12VDC= ±2V 20mA Max |
| Alarm output | AL 1, AL2 Relay: 250VAC~ 1A 1a |
| Control method | ON/OFF control, P, PI, PD, PID control |
| Hysteresis | 1 to 100℃/℉ (0.1 to 50.0℃/℉) |
| Proportional band(P) | 0.1 to 999.9℃/℉ |
| Integral time(I) | 0 to 9999 sec. |
| Derivative time(D) | 0 to 9999 sec. |
| Control period(T) | 0.5 to 120.0 sec. |
| Manual reset | 0.0 to 100.0% |
| Sampling period | 100ms |
| Dielectric strength | AC power | 2000VAC 50/60Hz 1 min.(between input terminal and power terminal) |
| AC/DC Power | 1000VAC 50/60Hz 1min.(between input terminal and power terminal) |
| Vibration | 0.75mm amplitude at frequency of 5 to 55Hz in each X, Y, Z direction for 2 hours |
| Relay life cycle | Mechanical | OUT: Over 5,000,000 times, AL1/2: Over 5.000,000 times |
| Electrical | OUT: Over 200,000 times(250VAC 3A resistive load) AL 1/2: Over 300,000 times(250VAC 1A resistive load) |
| Insulation resistance | Min. 100MΩ(at 500VDC megger) |
| Noise | Square-wave noise by noise simulator(pulse width 1µs) ±2KV R-phase and S-phase |
| Memory retention | Approx. 10 years (when using non-volatile semicnductor memory type) |
| Environment | Ambient temp. | -10 to 50℃, Shotage: -20 to 60℃ |
| Ambient humi. | 35 to 85%RH, Shotage: 35 to 85%RH |
| Insulation type | Double insulation or reinforced insulation (mark: q,dielectric strength between the measuring input part and the power part: AC power 2kV, AC/DC power 1kV) |
| Weight | Approx. 147g (approx. 100g) | Approx. 203g (approx. 133g) | Approx. 194g (approx. 124g) | Approx. 275g (approx. 179g) |